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| MITSUBISHI RF POWER MODULE M68745L SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO OUTLINE DRAWING 45 42 2-R1.5 Dimensions in mm BLOCK DIAGRAM 2 3 1 4 5 5 18 (36.5) 5 8.5 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN 35 1.5 6.4 32.2 1.5 H50 ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions ZG=ZL=50 f=806-870MHz, ZG=ZL=50 f=806-870MHz, ZG=ZL=50 f=806-870MHz, ZG=ZL=50 Ratings 9 5.5 6 6 -30 to +100 -40 to +100 Unit V V mW W C C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25C, ZG=ZL=50 unless otherwise noted) Symbol f PO 2fO in T Frequency range Output power 2nd. harmonic Input VSWR Total efficiency Stability Load VSWR tolerance Parameter Test conditions Limits Min 806 3.8 Max 870 -30 4 30 No parasitic oscillation No degradation or destroy Unit MHz W dBc VDD=7.2V, VGG=5V, Pin=1mW, ZG=ZL=50 PO=3.8W(VGG=Adjust), VDD=7.2V, Pin=1mW, ZG=ZL=50 ZG=ZL=50, VDD=5-9.3V, Load VSWR <4:1 VDD=9V, Pin=1mW, PO=3.8W (VGG Adjust), ZL=20:1 % Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. 97 MITSUBISHI RF POWER MODULE M68745L SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 6 5 4 3 2 PO 60 50 40 30 20 0.10 1 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 10.00 100 f=806MHz PO VDD=7.2V VGG=5V T ZG=ZL=50 1.00 10 T VDD=7.2V in 1 VGG=5V 10 Pin=1mW ZG=ZL=50 0 0 760 780 800 820 840 860 880 900 FREQUENCY f (MHz) 0.01 -30 -25 -20 -15 -10 -5 0 5 0 10 INPUT POWER Pin (dBm) OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 10.00 100 f=870MHz PO VDD=7.2V T VGG=5V ZG=ZL=50 1.00 10 OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE 5.0 PO f=806MHz 4.5 VDD=7.2V 4.0 Pin=1mW ZG=ZL=50 3.5 T 3.0 2.5 2.0 50 45 40 35 30 25 20 15 10 5 0.10 1 1.5 1.0 0.5 0.01 -30 -25 -20 -15 -10 -5 0 5 0 10 0.0 2.5 3.0 3.5 4.0 4.5 0 5.0 INPUT POWER Pin (dBm) GATE VOLTAGE VGG (V) OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE 5.0 50 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 2.5 3.0 3.5 T PO 45 40 35 30 25 20 15 f=870MHz 10 VDD=7.2V Pin=1mW 5 ZG=ZL=50 0 4.0 4.5 5.0 OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 14 70 f=806MHz 12 VGG=5V 60 Pin=1mW 10 ZG=ZL=50 50 8 6 4 2 0 4 5 6 7 8 9 10 11 PO 40 30 20 10 0 12 T GATE VOLTAGE VGG (V) DRAIN SUPPLY VOLTAGE VDD (V) Nov. 97 MITSUBISHI RF POWER MODULE M68745L SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 14 70 f=870MHz 12 VGG=5V 60 Pin=1mW PO 10 ZG=ZL=50 50 8 6 4 2 0 4 5 6 7 8 9 10 11 T 40 30 20 10 0 12 DRAIN SUPPLY VOLTAGE VDD (V) Nov. 97 |
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